v d s = 20 v rd s ( o n ) , v g s @ 1 . 8 v , i d s @ 2 a = 50m rd s ( o n ) , v g s @ 2 . 5 v , i d s @ 5 . 5 a = 32m rd s ( o n ) , v g s @ 4 . 5 v , i d s @ 6 . 6 a = 24m f ea t u r es a d v an c ed t r en c h p r o c e ss t e c hno l o gy hi g h d en s i t y c e ll d e s i g n f o r ul t r a lo w o n - r e s i s t an c e i dea l f o r l i i on b a tt e r y pa ck a pp li c a t i ons p a ck a g e di m en s i ons m a x i m u m r a t i n g s and t he r m a l c ha r a c t e r i s t i cs ( t a = 25o c un l e ss o t he r w i s e no t ed ) 25 o c p a r a m e t er s y m b ol l i m it u n it dr a i n - s o u r c e v o l t a ge v ds 20 g a t e - s o u r c e v o l t a ge v gs 12 v c o n t i nu o u s dr a i n c u rr e nt i d 7 p u l s e d dr a i n c u rr e n t i dm 25 a t a = 25 o c 2 m a x i m u m p o w e r d i ss i p a t i on t a = 75 o c p d 1 . 2 w o p e r a t i ng j un c t i o n a nd s t o r a g e t e m p e r a t u r e r a nge t j , t s tg - 55 t o 150 o c j un c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e ( p c b m o un t e d ) r q ja 62 . 5 o c / w m illi m e t er m illi m e t er r e f . m in . m a x . r e f . m in . m a x . a 1 . 10 m a x . l 0 . 45 r e f. a 1 0 0 . 10 l1 0 . 60 r e f . a 2 0 . 70 1 . 00 ! 0 " 10 " c 0 . 12 r e f. b 0 . 30 0 . 50 d 2 . 70 3 . 10 e 0 . 95 r e f. e 2 . 60 3 . 00 e 1 1 . 90 r e f. e 1 1 . 40 1 . 80 g2 s2 s2 d2 g1 s1 s1 d1 5 6 7 8 4 3 2 1 20v dual n-channel enhancement mode mosfet PT8822 1 date:2011/05 www.htsemi.com semiconductor jinyu
p a r a m e t er t es t c o nd i t i on s t a t ic dr a i n - s o u r c e b r ea k d o w n v o l t a ge bv d ss v gs = 0 v , i d = 250u a 20 v dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 1 . 8 v , i d = 2 a 36 . 0 50 . 0 dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 2 . 5 v , i d = 5 . 5 a 25 . 0 32 . 0 dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 4 . 5 v , i d = 6 . 6 a 19 . 0 24 . 0 m w g a t e t h r e s h o l d v o l t a ge v g s ( t h) v ds =v gs , i d = 250u a 0 . 4 1 v z e r o g a t e v o l t a g e dr a i n c u rr e nt i d ss v ds = 20 v , v gs = 0 v 1 u a g a t e b o d y l ea k a ge i g ss v gs = 12 v , v ds = 0 v 100 n a f o r w a r d t r a n s c o ndu c t a n ce g fs v ds = 5 v , i d = 7 a 17 . 7 s d y n a m ic t o t a l g a t e c h a r ge q g 8 . 19 10 g a t e - s o u r c e c h a r ge q gs 1 g a t e -dr a i n c h a r ge q gd v ds = 10 v , i d = 7 a v gs = 4 . 5 v 1 . 93 n c t u r n - o n d e l a y t i me t d ( on) 10 . 87 t u r n - o n r i s e t i me t r 6 . 03 t u r n - o f f d e l a y t i me t d ( o ff) 28 . 07 t u r n - o f f f a ll t i me t f v dd = 10 v , i d = 1 a , v g en = 4 . 5 v r g = 6 # 4 . 33 n s i npu t c a p a c i t a n ce c iss 836 . 88 o u t pu t c a p a c i t a n c e c o ss 126 . 53 r e v e r s e t r a n s f e r c a p a c i t a n ce c r ss v d s = 10 v , v gs = 0 v f = 1 . 0 m h z 92 . 78 p f s o ur ce -d r a i n d i o de m a x . d i o d e f o r w a r d c u rr e n t i s 2 . 5 a d i o d e f o r w a r d v o l t a g e v sd i s = 1 a , v gs = 0 v 1 . 2 v n o t e : p u l s e t e s t: p u l s e w i d t h <= 300u s , du t y c y c l e <= 2% symbol min. typ. max. unit 20v dual n-channel enhancement mode mosfet PT8822 2 date:2011/05 www.htsemi.com semiconductor jinyu
c h a r ac t e r i s t i cs c u r v e f i g 1. t y p i c a l o u t p u t c h a r a c t er i s t i c s f i g 2. t y p i c a l o u t p u t c h a r a c t er i s t i c s f i g 3. r d s on v . s . j un c t i o n t e m p er a t u r e f i g 4. n o r m a li z e d o n - r e s i s t a n ce v . s . j un c t i o n t e m p er a t u r e f i g 6 . g a t e t h r e s h o l d v o l t ag e v . s . j un c t i o n t e m p er a t u r e f i g 5. f o r w a r d c h a r a c t er i s t i c s o f r e v er s e d i o d e 20v dual n-channel enhancement mode mosfet PT8822 3 date:2011/05 www.htsemi.com semiconductor jinyu
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